Spin polarization and barrier-oxidation effects at the Co alumina interface in magnetic tunnel junctions
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Metal-Oxide Interfaces in Magnetic Tunnel Junctions
Metal-oxide interfaces play an important role in spintronics—a new area of microelectronics that exploits spin of electrons in addition to the traditional charge degree of freedom to enhance the performance of existing semiconductor devices. Magnetic tunnel junctions (MTJs) consisting of spin-polarized ferromagnetic electrodes sandwiching an insulating barrier are such promising candidates of s...
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تاریخ انتشار 2014